Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide

被引:13
|
作者
Delcourt, Enguerran [1 ]
Nessim, Jebali [1 ]
Bodiou, Loic [1 ]
Baillieul, Marion [2 ]
Baudet, Emeline [2 ]
Lemaitre, Jonathan [1 ]
Nazabal, Virginie [2 ]
Dumeige, Yannick [1 ]
Charrier, Joel [1 ]
机构
[1] Univ Rennes, Inst FOTON, UMR CNRS 6082, CNRS, BP80518, F-22305 Lannion, France
[2] Univ Rennes, ISCR Inst Sci Chim Rennes, CNRS, UMR 6226, F-35000 Rennes, France
关键词
OPTICAL NONLINEARITIES; WAVELENGTH CONVERSION; REGENERATION; GLASSES;
D O I
10.1364/OME.393535
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Third order optical nonlinear effects relying on the instantaneous Kerr effect are investigated in a straight chalcogenide ridge waveguide. The sample consists of a GeSbSe film deposited on a thermally oxidized silicon substrate. Ridge waveguides were processed using photolithography and dry etching techniques. From a 1.1 cm long integrated GeSbSe device, self-phase modulation with a maximum nonlinear phase shift of 2.02 pi for a peak power of 15.8 W and four-wave mixing with an external conversion efficiency of -42.6 dB for a pump power of 28 mW are demonstrated. Experimental results show a good agreement with calculations. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:1440 / 1450
页数:11
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