A multi-kilohertz pinch plasma radiation source for extreme ultraviolet lithography

被引:29
|
作者
Bergmann, K
Rosier, O
Lebert, R
Neff, W
Poprawe, R
机构
[1] Fraunhofer Inst Lasertech, D-52074 Aachen, Germany
[2] Rhein Westfal TH Aachen, Lehrstuhl Lasertech, D-52074 Aachen, Germany
关键词
extreme ultraviolet; gas discharge plasma; pinch plasma; xenon; extreme ultraviolet lithography;
D O I
10.1016/S0167-9317(01)00437-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A pinch plasma source in the extreme ultraviolet is presented where the special design of the electrodes leads to advantages concerning low erosive operation and an effective coupling of the electrically stored energy to the electrode system. Most promising results of the source parameters with respect to the demands for extreme ultraviolet lithography are achieved when operating with xenon. Intense emission around 11 nm and 13 nm is observed. The plasma column has a diameter of less than 500 mum when viewed from the axial direction. The electrode design allows for an accessible solid angle of around pi sr. The shot-to-shot stability is better than 4% (rms). A maximum output of 0.8 mJ/(sr 2% bw) at 13.5 mn has been observed with an input pulse energy of 2 J. Operation at a repetition rate of 1 kHz and an electrical input power of 2 kW has been demonstrated with an average emitted power of around 0.3 W/(sr 2% bw). Approaches of power scaling into the range which is desired for EUVL will be discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:71 / 77
页数:7
相关论文
共 50 条
  • [31] An extreme ultraviolet radiation source based on plasma heated by millimeter range radiation
    Vodopyanov A.V.
    Golubev S.V.
    Mansfeld D.A.
    Salashchenko N.N.
    Chkhalo N.I.
    Bulletin of the Russian Academy of Sciences: Physics, 2011, 75 (1) : 64 - 66
  • [32] Tin removal by an annular surface wave plasma antenna in an extreme ultraviolet lithography source
    Qerimi, Dren
    Herschberg, Andrew C.
    Panici, Gianluca
    Hays, Parker
    Pohlman, Tyler
    Ruzic, David N.
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (11)
  • [33] Laser-produced plasma light source for extreme-ultraviolet lithography applications
    Abhari, Reza S.
    Rollinger, Bob
    Giovannini, Andrea Z.
    Morris, Oran
    Henderson, Ian
    Ellwi, Samir S.
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2012, 11 (02):
  • [34] Scale-up of a cluster jet laser plasma source for Extreme Ultraviolet Lithography
    Kubiak, GD
    Bernardez, LJ
    Krenz, K
    Sweatt, WC
    EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 : 669 - 678
  • [35] OPTIMIZATION OF THE COLLECTING MIRROR LOCATION IN THE PLASMA SOURCE OF EXTREME ULTRAVIOLET RADIATION
    Borgun, Ie. V.
    Hrechko, Ya. O.
    Azarenkov, N. A.
    Dimitrova, V. D.
    Ryabchikov, D. L.
    Sereda, I. N.
    Hryhorenko, A. V.
    Tseluyko, A. F.
    PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2015, (01): : 174 - 176
  • [36] Power scaling of a Z-pinch extreme ultraviolet source
    McGeoch, MW
    EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 : 861 - 866
  • [37] Development of Xe-filled capillary discharge extreme ultraviolet radiation source for semiconductor lithography
    Teramoto, Y
    Sato, H
    Bessho, K
    Miyauchi, K
    Ikeuchi, M
    Okubo, K
    Yoshioka, M
    Toyoda, K
    EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 : 767 - 775
  • [38] Plasma etch method for extreme ultraviolet lithography photomask
    Wu, Banqiu
    Kumar, Ajay
    APPLIED PHYSICS LETTERS, 2007, 90 (06)
  • [39] Tin laser-produced plasma source modeling at 13.5 nm for extreme ultraviolet lithography
    White, J.
    O'Sullivan, G.
    Zakharov, S.
    Choi, P.
    Zakharov, V.
    Nishimura, H.
    Fujioka, S.
    Nishihara, K.
    APPLIED PHYSICS LETTERS, 2008, 92 (15)
  • [40] Optimization of a gas discharge plasma source for extreme ultraviolet interference lithography at a wavelength of 11 nm
    Bergmann, K.
    Danylyuk, S. V.
    Juschkin, L.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)