Influence of Si on stability of TiC in Al melts

被引：16

作者：

Ding Hai-min ^{[1
,2
]}

Liu Xiang-fa ^{[2
]}

机构：

[1] N China Elect Power Univ, Dept Mech Engn, Baoding 071003, Peoples R China

[2] Shandong Univ, Key Lab Liquid Solid Struct Evolut & Proc Mat, Minist Educ, Jinan 250061, Peoples R China

来源：

TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA | 2011年 / 21卷 / 07期

基金：

中国国家自然科学基金;

关键词：

TiC; silicon; Al-Si alloy; stability; COMPOSITES;

D O I：

10.1016/S1003-6326(11)60882-0

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The influence of Si on the stability of TiC in Al melts was studied. It is found that TiC particles in Al melts become unstable with the addition of Si. When the melting temperature is below 890 degrees C, TiC will react with Al and Si to form TiAlxSiy and Al4C3 phases. But if the melt temperature is above 890 degrees C, TiC will react with Al and Si to form to Ti3SiC2 and Al4C3. It is considered that the influence of Si on the stability of TiC in Al melts is due to its incursion into TiC crystal lattice during the holding, which will cause serious lattice distortion in TiC and then speed up the out-diffusion of surrounded C atoms.

引用

页码：1465 / 1472

页数：8

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