1.12 μm polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition

被引：1
|
作者：
Nishiyama, N [1 ]
Arai, M [1 ]
Shinada, S [1 ]
Azuchi, M [1 ]
Matsutani, A [1 ]
Miyamoto, T [1 ]
Koyama, F [1 ]
Iga, K [1 ]
机构：
[1] Tokyo Inst Technol, Microsyst Res Ctr, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 5A期
关键词：
surface emitting lasers; GaAs (311)B substrates; quantum wells;
D O I：
10.1143/JJAP.40.L437
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A highly strained GaInAs vertical-cavity surface-emitting laser (VCSEL) emitting at 1.12 mum has been realized on a GaAs(311)B substrate by metal organic chemical vapor deposition (MOCVD) for the first time, The threshold current of an 8 mum oxide aperture device was as low as 0.9 mA. This device operated at up to 170 degreesC without a heatsink under the CW condition. The polarization direction of the oscillation mode was stable and the orthogonal polarization suppression ratio (OPSR) was 30 dB. The operating lifetime of over 2000 under room-temperature CW conditions was confirmed without any degradation in spite of high strain of over 2%.
引用
收藏
页码：L437 / L439
页数：3
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