Design and Analysis of Polarization-Insensitive Broadband Microwave Absorber for Perfect Absorption

被引:6
|
作者
Malik, Sudha [1 ]
Saikia, Mondeep [1 ]
Sharma, Aditi [1 ]
Singh, Gaganpreet [2 ]
Ramkumar, Janakrajan [2 ]
Mishra, Puneet K. [3 ]
Srivastava, Kumar V. [1 ]
机构
[1] IITK, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
[2] IITK, Dept Mech Engn, Kanpur 208016, Uttar Pradesh, India
[3] ISRO, UR Rao Satellite Ctr, ISITE, Bengaluru 560037, India
来源
关键词
LAYER;
D O I
10.2528/PIERM21062702
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple design configuration of a broadband polarization-insensitive double-layered microwave absorber is presented here. The proposed absorber is designed using indium tin oxide (ITO) based on thin resistive film. The novelty of structure is to achieve large absorption bandwidth with more than 99% absorption. The proposed structure is modeled for 20 dB absorption bandwidth at normal incidence from 6.3 GHz to 14.2 GHz spanning over C-band, X-band, and Ku-band. Under oblique incidence the proposed structure is stable up to 60. for TE polarization and 45 degrees for TM polarization. To understand the operating principle of absorption of the proposed structure, an equivalent circuit is derived, and surface current distribution is also studied. A fabricated sample is measured, which validates our simulation.
引用
收藏
页码:213 / 222
页数:10
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