Effect of pressure on electrical resistance of WSe2 single crystal

被引：9
|
作者：
Vaidya, R [1 ]
Bhatt, N
Patel, SG
Jani, AR
Garg, AB
Vijayakumar, V
Godwal, BK
机构：
[1] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India
[2] Bhabha Atom Res Ctr, High Pressure Phys Div, Bombay 400085, Maharashtra, India
来源：
PRAMANA-JOURNAL OF PHYSICS | 2003年 / 61卷 / 01期
关键词：
pressure dependence of resistance; transition metal dichalcogenides; WSe2 single crystal; Bridgman anvil; diamond anvil cell;
D O I：
10.1007/BF02704523
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The results of electrical resistance measurements under pressure on single crystals of WSe2 are reported. Measurements up to 8.5 GPa are carried out using Bridgman anvil set up and beyond it using diamond anvil cell (DAC) up to a pressure of 27 GPa. There is no clear indication of any phase transition till the highest pressure is reached in these measurements.
引用
收藏
页码：183 / 186
页数：4
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