Electrical transport between a MoS2-based electric double-layer transistor and normal and superconducting Al

被引：0

作者：

Aikawa, Y. ^{[1
]}

Tsumura, K. ^{[2
]}

Narita, T. ^{[1
]}

Takayanagi, H. ^{[3
]}

Ishiguro, R. ^{[1
]}

机构：

[1] Japan Womens Univ, Dept Phys, Bunkyo Ku, Tokyo 1128681, Japan

[2] Tokyo Univ Sci, Dept Appl Phys, Tokyo 1258585, Japan

[3] Tokyo Univ Sci, Res Inst Sci & Tech, Tokyo 1258585, Japan

来源：

28TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT28) | 2018年 / 969卷

关键词：

D O I：

10.1088/1742-6596/969/1/012057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present fabrication of a junction between an atomic layer molybdenum disulfide-based electric double layer transistor and an aluminum film, and electrical transport measurements between molybdenum disulfide (MoS2) carriers induced by strong electric fields due to its electric double-layer transistor and a conventional superconducting aluminum though Schottky barrier at the interface. A superconducting gap structure was observed in the differential resistance measurement of the dilution refrigerator temperature. Since the gap structures disappeared at about 900mK, the temperature change of this structure is caused due to aluminum superconductivity. However, as for the magnetic field change of the gap structures, the possibility of the coexistence of two kinds of superconducting states at the junction would be considered.

引用

页数：5

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