Non-Gaussian fluctuation in the charge transport of Si nanochains

被引:11
|
作者
Kohno, Hideo [1 ]
Takeda, Seiji [1 ]
机构
[1] Osaka Univ, Grad Sch Sci, Dept Phys, Osaka 5600043, Japan
关键词
D O I
10.1088/0957-4484/18/39/395706
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The stability of the tunneling charge transport of a tangle of Si nanochains is investigated at high bias voltages using a micromanipulator in a scanning electron microscope. We confirm that the influence of electron injection due to the electron beam of a scanning electron microscope on the charge transport properties of nanochains is negligible when the electrode gap is small and the bias voltage is large. Under such conditions, current - time curves show large fluctuations. We find that the fluctuation is not a simple Brownian motion, but its distribution function can be fitted well by a Levy distribution. Its origin is discussed in terms of percolation theory.
引用
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页数:6
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