Bending Effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate

被引：0
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作者：
Bollaert, Sylvain [1 ]
Shi, Jinshan [1 ]
Wichmann, Nicolas [1 ]
Roelens, Yannick [1 ]
机构：
[1] Univ Lille, IEMN, F-59652 Villeneuve Dascq, France
来源：
2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2013年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：111 / 112
页数：2
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