Ammonium Salts: New Synergistic Additive for Chemical Vapor Deposition Growth of MoS2

被引:9
|
作者
Li, Guanmeng [1 ,2 ]
Zhang, Weifeng [1 ]
Zhang, Yan [1 ]
Lee, Yangjin [3 ]
Zhao, Zihan [1 ]
Song, Xue-zhi [2 ]
Tan, Zhenquan [2 ]
Kim, Kwanpyo [3 ]
Liu, Nan [1 ]
机构
[1] Beijing Normal Univ, Coll Chem, Beijing Key Lab Energy Convers & Storage Mat, Beijing 100875, Peoples R China
[2] Dalian Univ Technol, Panjin Branch, State Key Lab Fine Chem, Sch Chem Engn, Panjin 124221, Liaoning, Peoples R China
[3] Yonsei Univ, Dept Phys, Seoul 03722, South Korea
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2021年 / 12卷 / 51期
基金
中国国家自然科学基金;
关键词
D O I
10.1021/acs.jpclett.1c03742
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Controllable and scalable fabrication is the precondition for realizing the large number of superior electronic and catalytic applications of MoS2. Here, we report a new type of synergistic additives, ammonium salts, for chemical vapor deposition (CVD) growth of MoS2. On the basis of the catalysis of ammonium salts, we can achieve layer and shape-controlled MoS2 domains and centimeter-scale MoS2 films. Compared to frequently used alkali metal ions as the catalysts, ammonium salts are decomposed completely at low temperature (below 513 degrees C), resulting in clean and nondestructive as-grown substrates. Thus, MoS2 electronic devices can be directly fabricated on them, and the redundant transfer step is no longer needed. This method can also promote the direct growth of MoS2 on the conductive substrate and boost the improvement of hydrogen evolution reaction (HER) performance. The ammonium salt-mediated CVD method will pave a new way for MoS2 toward real applications in modern electronics and catalysis.
引用
收藏
页码:12384 / 12390
页数:7
相关论文
共 50 条
  • [1] Role of the Growth Temperature in MoS2 Growth by Chemical Vapor Deposition
    Kim, Min-Woo
    Kim, Ja-Yeon
    Cho, Yoo-Hyun
    Park, Hyun-Sun
    Kwon, Min-Ki
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (03) : 2140 - 2143
  • [2] Chemical Vapor Deposition of MoS2 films
    Mun, Jihun
    Kim, Dongbin
    Yun, Juyoung
    Shin, Yonghyeon
    Kang, Sangwoo
    Kim, Taesung
    SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11, 2013, 58 (07): : 199 - 202
  • [3] Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition
    Ling, Xi
    Lee, Yi-Hsien
    Lin, Yuxuan
    Fang, Wenjing
    Yu, Lili
    Dresselhaus, Mildred S.
    Kong, Jing
    NANO LETTERS, 2014, 14 (02) : 464 - 472
  • [4] Influence of growth temperature on MoS2 synthesis by chemical vapor deposition
    Zhu, Zusong
    Zhan, Shengbao
    Zhang, Jie
    Jiang, Guisheng
    Yi, Mingfang
    Wen, Jun
    MATERIALS RESEARCH EXPRESS, 2019, 6 (09)
  • [5] Role of nuclei in controllable MoS2 growth by modified chemical vapor deposition
    Song, Wenlei
    Gao, Ming
    Zhang, Pengbo
    Han, Baichao
    Chen, Dongyun
    Fang, Xiaohong
    Zhao, Lei
    Ma, Zhongquan
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (09) : 7425 - 7434
  • [6] Role of nuclei in controllable MoS2 growth by modified chemical vapor deposition
    Wenlei Song
    Ming Gao
    Pengbo Zhang
    Baichao Han
    Dongyun Chen
    Xiaohong Fang
    Lei Zhao
    Zhongquan Ma
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 7425 - 7434
  • [7] Spiral growth of few-layer MoS2 by chemical vapor deposition
    Dong, X.
    Yan, C.
    Tomer, D.
    Li, C. H.
    Li, L.
    APPLIED PHYSICS LETTERS, 2016, 109 (05)
  • [8] Role of hydrogen in the chemical vapor deposition growth of MoS2 atomic layers
    Li, Xiao
    Li, Xinming
    Zang, Xiaobei
    Zhu, Miao
    He, Yijia
    Wang, Kunlin
    Xie, Dan
    Zhu, Hongwei
    NANOSCALE, 2015, 7 (18) : 8398 - 8404
  • [9] Growth of bilayer MoS2 flakes by reverse flow chemical vapor deposition
    Nguyen, Van Tu
    Nguyen, Van Chuc
    Tran, Van Hau
    Park, Ji-Yong
    MATERIALS LETTERS, 2023, 346
  • [10] MoS2 growth using physical vapor deposition
    Jakovidis, G
    Lemon, KS
    Singh, A
    Taheri, E
    COMMAD 2000 PROCEEDINGS, 2000, : 316 - 319