Silicon carbide FETs for high temperature nuclear environments

被引：24
|
作者：
Scozzie, CJ
McGarrity, JM
Blackburn, J
DeLancey, WM
机构：
[1] U. S. Army Research Laboratory, Adelphi
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期
关键词：
D O I：
10.1109/23.507163
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiC transistors can operate at very high temperatures and survive very high radiation doses. These characteristics make SiC potentially the ideal technology for nuclear power applications. In this paper we report, for the first time, on the active in-core irradiation of 6H-SiC depletion-mode junction field-effect transistors (JFETs) at 25 degrees and 300 degrees C in a nuclear reactor operated at 200 kW. No significant degradation in the device characteristics was observed until the total neutron fluence exceeded 10(15) n/cm(2) for irradiation at 25 degrees C, and no significant changes were observed even at 5 x 10(15) n/cm(2) at 300 degrees C. The results of this experiment may also indicate exciting evidence for the anneal of neutron displacement damage for devices irradiated at 300 degrees C.
引用
收藏
页码：1642 / 1648
页数：7
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