Chern-Simons orbital magnetoelectric coupling in generic insulators

被引：77

作者：

Coh, Sinisa ^{[1
]}

Vanderbilt, David ^{[1
]}

Malashevich, Andrei ^{[2
]}

Souza, Ivo ^{[3
,4
,5
]}

机构：

[1] Rutgers State Univ, Dept Phys Astron, Piscataway, NJ 08854 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[3] Univ Basque Country, Ctr Fis Mat, San Sebastian 20018, Spain

[4] Univ Basque Country, DIPC, San Sebastian 20018, Spain

[5] Ikerbasque, Basque Fdn Sci, E-48011 Bilbao, Spain

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 08期

基金：

美国国家科学基金会;

关键词：

POLARIZATION;

D O I：

10.1103/PhysRevB.83.085108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a Wannier-based method to calculate the Chern-Simons orbital magnetoelectric coupling in the framework of first-principles density-functional theory. In view of recent developments in connection with strong Z(2) topological insulators, we anticipate that the Chern-Simons contribution to the magnetoelectric coupling could, in special cases, be as large or larger than the total magnetoelectric coupling in known magnetoelectrics, such as Cr2O3. The results of our calculations for the ordinary magnetoelectrics Cr2O3, BiFeO3, and GdAlO3 confirm that the Chern-Simons contribution is quite small in these cases. On the other hand, we show that, if the spatial-inversion and time-reversal symmetries of the Z(2) topological insulator Bi2Se3 are broken by hand, large induced changes appear in the Chern-Simons magnetoelectric coupling.

引用

页数：12

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