Modeling of the body current in a Bi-MOS hybrid-mode environment

The body current Is of deep submicron lightly doped drain pMOSFETs has been investigated. Based on the experimental results, an analytical I-B model, applicable for devices operating in a Bi-MOS hybrid-mode environment, has been developed for the first time. The proposed model is able to effectively characterize the measured is results over a wide range of independently applied biases (gate, drain and body) and gate lengths (from 1 mum down to 0.25 mum). The possibility of minimizing or even eliminating the undesired Ig is also explored and discussed for the first time. (C) 2000 Elsevier Science Ltd. All rights reserved.