Transport properties of LaTiO3/SrTiO3 heterostructures

被引：40
|
作者：
Ohtsuka, R. [1 ]
Matvejeff, M. [1 ]
Nishio, K. [1 ]
Takahashi, R. [1 ]
Lippmaa, M. [1 ]
机构：
[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期
关键词：
electrical resistivity; Hall mobility; interface phenomena; lanthanum compounds; strontium compounds; THIN-FILMS; HETEROINTERFACE; INTERFACES; TITANATE; MOBILITY; SURFACE;
D O I：
10.1063/1.3430006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistivity measurements show that SrTiO3/LaTiO3/SrTiO3 heterostructures remain metallic even for single unit cell LaTiO3 layers. Hall resistances of all heterostructures are nonlinear functions of the applied field. The Hall data is analyzed in terms of a two-layer model, indicating that a low-mobility layer exists at the LaTiO3/SrTiO3 interface, while carriers with mobilities approaching 10 000 cm(2)/V s are present deep in the SrTiO3 substrate. (C) 2010 American Institute of Physics. [doi:10.1063/1.3430006]
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页数：3
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