Deposition of thin metal films by means of arc discharges under ultra-high vacuum conditions

被引:0
|
作者
Sadowski, Marek J. [1 ]
Strzyzewski, Pawel [1 ]
Nietubyc, Robert [1 ]
机构
[1] Andrzej Soltan Inst Nucl Studies, Dept Plasma Phys & Technol PV, PL-05400 Warsaw, Poland
关键词
deposition; thin films; are discharges; vacuum; superconducting layers;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
The paper reports on plasma technology of the production of thin metal layers by means of controlled arc discharges, initiated at ultra-high vacuum (UHV) conditions, i.e. at the background pressure < 10(-8) Pa, and carried out at the operating pressure < 10(-5) Pa. Different UHV arc facilities, which have been designed and operated at IPJ in Swierk, are described. The UHV arc facility equipped with a cylindrical cathode made of a pure niobium. (Nb) is applied for the deposition of superconducting Nb layers upon inner surfaces of RF accelerator cavities. The UHV arc device equipped with a truncated-cone cathode made of pure lead (Pb) is used for the formation of photocathodes in RF electron guns. Filtering systems, which are used to reduce an amount of metal micro-droplets, are described. Characteristics of the deposited samples show that very pure and smooth metal films of the bulk-like crystalline structure can be produced by means of the described technique.
引用
收藏
页码:1881 / 1888
页数:8
相关论文
共 50 条
  • [31] Electron irradiation effects in silicon thin foils under ultra-high vacuum environment
    Osaka Univ, Osaka, Japan
    Mater Sci Forum, pt 1 (553-558):
  • [32] The deposition of NbN and NbC thin films by filtered vacuum cathodic arc deposition
    Bendavid, A
    Martin, PJ
    Kinder, TJ
    Preston, EW
    SURFACE & COATINGS TECHNOLOGY, 2003, 163 : 347 - 352
  • [33] IMPROVED SILICON SOURCE FOR ULTRA-HIGH VACUUM DEPOSITION.
    Racette, G.W.
    Rutecki, D.J.
    Insulation, circuits, 1981, 27 (09): : 40 - 41
  • [34] Effects of defect creation and passivation on graphite friction under ultra-high vacuum conditions
    Zhou, Xiang
    He, Wenjie
    Liu, Changtao
    Zhang, Honglin
    Sun, Junhui
    Wang, Wen
    CARBON, 2024, 225
  • [36] Formation of ultra high pure metal thin films by means of a dry process
    Horino, Y
    Chayahara, A
    Kinomura, A
    Tsubouchi, N
    Heck, C
    Abiko, K
    MATERIALS TRANSACTIONS JIM, 2000, 41 (01): : 28 - 30
  • [37] RF properties at 6 GHz of ultra-high vacuum cathodic arc films up to 450 oersted
    Romanenko, A.
    Russo, R.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2006, 441 (1-2): : 134 - 136
  • [38] Deposition of thin coatings on polyethylene films under conditions of pulsed dielectric harrier discharges (PDBD)
    Sentek, J
    Kus, M
    Schmidt-Szalowski, K
    PRZEMYSL CHEMICZNY, 2006, 85 (04): : 258 - 265
  • [39] Morphological Instability of High Ge Percent SiGe Films Grown by Ultra-High Vacuum Chemical Vapor Deposition
    Hart, John
    Hazbun, Ramsey
    Nakos, Jim
    Siegel, Dean
    Funch, Christopher
    Kolodzey, James
    Harame, David
    SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64 (06): : 659 - 667
  • [40] High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation
    Minami, T
    Ida, S
    Miyata, T
    THIN SOLID FILMS, 2002, 416 (1-2) : 92 - 96