Determination of detrapping times in semiconductor detectors

被引：8
|
作者：
Kramberger, G. [1 ]
Cindro, V. [1 ]
Mandic, I. [1 ]
Mikuz, M. [1 ,2 ]
Zavrtanik, M. [1 ]
机构：
[1] Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia
[2] Univ Ljubljana, Fac Math & Phys, SI-1000 Ljubljana, Slovenia
来源：
JOURNAL OF INSTRUMENTATION | 2012年 / 7卷
关键词：
Solid state detectors; Radiation damage evaluation methods; Si microstrip and pad detectors; Radiation damage to detector materials (solid state); ELECTRIC-FIELD DISTRIBUTION; SILICON-DETECTORS; IRRADIATED SILICON; RADIATION; HOLES;
D O I：
10.1088/1748-0221/7/04/P04006
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Transient current technique was used in a novel way for determination of carrier detrapping/emission times from energy levels in the band-gap of a semiconductor particle detector. It was used for determination of detrapping times of holes and related trap parameters in neutron irradiated silicon pad detectors.
引用
收藏
页数：12
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