Determination of detrapping times in semiconductor detectors

被引：8

作者：

Kramberger, G. ^{[1
]}

Cindro, V. ^{[1
]}

Mandic, I. ^{[1
]}

Mikuz, M. ^{[1
,2
]}

Zavrtanik, M. ^{[1
]}

机构：

[1] Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia

[2] Univ Ljubljana, Fac Math & Phys, SI-1000 Ljubljana, Slovenia

来源：

JOURNAL OF INSTRUMENTATION | 2012年 / 7卷

关键词：

Solid state detectors; Radiation damage evaluation methods; Si microstrip and pad detectors; Radiation damage to detector materials (solid state); ELECTRIC-FIELD DISTRIBUTION; SILICON-DETECTORS; IRRADIATED SILICON; RADIATION; HOLES;

D O I：

10.1088/1748-0221/7/04/P04006

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Transient current technique was used in a novel way for determination of carrier detrapping/emission times from energy levels in the band-gap of a semiconductor particle detector. It was used for determination of detrapping times of holes and related trap parameters in neutron irradiated silicon pad detectors.

引用

页数：12

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