Capacitive Memory Using GLAD Synthesized Annealed SnO2 Nanowires Array as a Dielectric

This paper presents the fabrication of as-deposited and annealed SnO2 NWs via GLAD (glancing angle deposition) technique. On investigation, the 650 degrees C SnO2 NWs show improvement in its crystallinity. The capacitive behavior of both the device was analyzed by evaluating the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics for both asdeposited and annealed sample by varying frequencies. The annealed device showed improved capacitive memory with interface trap density (9.7x10(9) eV(-1) cm(-2)), charge storage density of 5.45x10(10) cm(-2) and memory window of ( )similar to 0.89 V at +/- 8V for 1MHz.