Electrical characterization of p-type Zn(Se,Te):N semiconductor layers

被引：0
|
作者：
Marshall, T [1 ]
Pashley, MD [1 ]
Sicignano, A [1 ]
Zhao, L [1 ]
机构：
[1] PHILIPS ELECT N AMER CORP,PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV | 1996年 / 2693卷
关键词：
D O I：
10.1117/12.238979
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：29 / 33
页数：5
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