Effect of thickness of ZnO active layer on ZnO-TFT's characteristics

被引：80
|
作者：
Chung, J. H. [1 ]
Lee, J. Y. [1 ]
Kim, H. S. [1 ]
Jang, N. W. [1 ]
Kim, J. H. [2 ]
机构：
[1] Korea Maritime Univ, Pusan 606791, South Korea
[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 16期
基金：
新加坡国家研究基金会;
关键词：
ZnO; thin film transistor; thickness effect;
D O I：
10.1016/j.tsf.2007.07.107
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the electrical characteristics of ZnO thin film transistors with respect to the thickness of ZnO active layers. The ZnO layers with the thickness of 30 nm to 150 nm were deposited on bottom gate patterned Si substrate by RF sputtering at room temperature. The low-temperature oxide served as gate dielectric. As ZnO channel layer got thicker, the leakage current at V-DS=30 V and V-G=0 V greatly increased from 10(-10) A to 10(-6) A, while the threshold voltage decreased from 15 V to 10 V On the other hand, the field effect mobility got around 0.15 cm(2)/V s except for the 30-m-thick channel. Overall, the 55-nm-thick ZnO channel layer showed the best performance. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：5597 / 5601
页数：5
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