Initial interfacial reaction layers formed in Sn-3.5Ag solder/electroless Ni-P plated Cu substrate system

被引:11
|
作者
Kang, Han-Byul [1 ,2 ]
Lee, Jae-Wook [1 ,2 ]
Bae, Jee-Hwan [1 ,2 ]
Park, Min-Ho [1 ,2 ]
Yoon, Jeong-Won [1 ]
Jung, Seung-Boo [1 ]
Ju, Jae-Seon [3 ]
Yang, Cheol-Woong [1 ,2 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Ctr Nanotubes & Nanostructured Composites, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, Cooperat Ctr Res Facil, Suwon 440746, South Korea
关键词
D O I
10.1557/JMR.2008.0266
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Analytical electron microscopy (AEM) was used to examine the initial interfacial reaction layers between a eutectic Sn-3.5Ag solder and an electroless nickel-immersion gold-plated (ENIG) Cu substrate during reflow at 255 degrees C for 1 s. AEM confirmed that a thick upper (Au,Ni)Sn-2 layer and a thin Ni3Sn4 layer had formed through the reaction between the solder and ENIG. The amorphous electroless Ni(P) plated layer transformed into two P-rich Ni layers. One is a crystallized P-rich Ni layer, and the other is an intermediate state P-rich Ni layer before the crystallization. The crystallized P-rich layer consisted of Ni2P and Ni12P5. A thin MY layer had formed underneath the Ni3Sn4 layer and is believed to be a predecessor of the Ni2SnP ternary phase. A Ni12P5 phase was observed beneath the Ni2P thin layer. In addition, nanocrystalline Ni was found to coexist with the amorphous Ni(P) phase in the intermediate state P-rich Ni layer.
引用
收藏
页码:2195 / 2201
页数:7
相关论文
共 50 条
  • [41] Effect of in addition on Sn-3.5Ag solder and joint with Cu substrate
    Choi, WK
    Yoon, SW
    Lee, HM
    MATERIALS TRANSACTIONS, 2001, 42 (05) : 783 - 789
  • [42] Effect of phosphorus content on Cu/Ni-P/Sn-3.5Ag solder joint strength after multiple reflows
    Chen, Zhong
    Kumar, Aditya
    Mona, M.
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (12) : 2126 - 2134
  • [43] Effect of 0.5 wt% Cu in Sn-3.5%Ag solder to retard interfacial reactions with the electroless Ni-P metallization for BGA solder joints application
    Alam, Mohammad Ohidul
    Chan, Y. C.
    IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2008, 31 (02): : 431 - 438
  • [44] Effect of phosphorus content on Cu/Ni-P/Sn-3.5Ag solder joint strength after multiple reflows
    Zhong Chen
    Aditya Kumar
    M. Mona
    Journal of Electronic Materials, 2006, 35 : 2126 - 2134
  • [45] Effect of Morphological Change of Ni3Sn4 Intermetallic Compounds on the Growth Kinetics in Electroless Ni-P/Sn-3.5Ag Solder Joint
    Sohn, Yoonchul
    METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2020, 51 (06): : 2905 - 2914
  • [46] The influence of phosphorus concentration of electroless plated Ni-P film on interfacial structures in the joints between Sn-Ag solder and Ni-P alloy film
    Komiyama, T
    Chonan, Y
    Onuki, J
    Ohta, T
    MATERIALS TRANSACTIONS, 2002, 43 (02) : 227 - 231
  • [47] Transmission electron microscopy of solder joints of Sn-Ag-Cu/electroless Ni-P and Sn-Ag-Cu-Bi/electroless Ni-P of an electronic device
    Torazawa, N
    Arai, S
    Takase, Y
    Sasaki, K
    Saka, H
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2002, 66 (11) : 1122 - 1130
  • [48] Effect of Morphological Change of Ni3Sn4 Intermetallic Compounds on the Growth Kinetics in Electroless Ni-P/Sn-3.5Ag Solder Joint
    Yoonchul Sohn
    Metallurgical and Materials Transactions A, 2020, 51 : 2905 - 2914
  • [49] Microstructure of interfacial reaction layer in Sn-Ag-Cu/electroless Ni (P) solder joint
    Kang, Han-Byul
    Bae, Jee-Hwan
    Yoon, Jeong-Won
    Jung, Seung-Boo
    Park, Jongwoo
    Yang, Cheol-Woong
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 22 (09) : 1308 - 1312
  • [50] Growth kinetics of IMC formed between Sn-3.5Ag-0.75Cu BGA solder and electroless Ni-P/Cu substrate by solid-state isothermal aging
    Yoon, JW
    Lee, CB
    Jung, SB
    DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, 2004, 449-4 : 893 - 896