Initial interfacial reaction layers formed in Sn-3.5Ag solder/electroless Ni-P plated Cu substrate system

被引:11
|
作者
Kang, Han-Byul [1 ,2 ]
Lee, Jae-Wook [1 ,2 ]
Bae, Jee-Hwan [1 ,2 ]
Park, Min-Ho [1 ,2 ]
Yoon, Jeong-Won [1 ]
Jung, Seung-Boo [1 ]
Ju, Jae-Seon [3 ]
Yang, Cheol-Woong [1 ,2 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Ctr Nanotubes & Nanostructured Composites, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, Cooperat Ctr Res Facil, Suwon 440746, South Korea
关键词
D O I
10.1557/JMR.2008.0266
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Analytical electron microscopy (AEM) was used to examine the initial interfacial reaction layers between a eutectic Sn-3.5Ag solder and an electroless nickel-immersion gold-plated (ENIG) Cu substrate during reflow at 255 degrees C for 1 s. AEM confirmed that a thick upper (Au,Ni)Sn-2 layer and a thin Ni3Sn4 layer had formed through the reaction between the solder and ENIG. The amorphous electroless Ni(P) plated layer transformed into two P-rich Ni layers. One is a crystallized P-rich Ni layer, and the other is an intermediate state P-rich Ni layer before the crystallization. The crystallized P-rich layer consisted of Ni2P and Ni12P5. A thin MY layer had formed underneath the Ni3Sn4 layer and is believed to be a predecessor of the Ni2SnP ternary phase. A Ni12P5 phase was observed beneath the Ni2P thin layer. In addition, nanocrystalline Ni was found to coexist with the amorphous Ni(P) phase in the intermediate state P-rich Ni layer.
引用
收藏
页码:2195 / 2201
页数:7
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