Model of the 1/f noise in GaN/AlGaN heterojunction field effect transistors

被引：0
|
作者：
Levinshtein, ME [1 ]
Dmitriev, AP [1 ]
Rumyantsev, SL [1 ]
Shur, MS [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, Solid State Elect Div, St Petersburg 194021, Russia
来源：
Noise and Fluctuations | 2005年 / 780卷
关键词：
1/f noise; tunneling; GaN/AlGaN; heterostructures;
D O I：
暂无
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
The model describing the 1/f noise in GaN/AlGaN Heterojunction Field Effect Transistors (HFETs) has been proposed. This model links the 1/f noise to the phonon assisted tunneling from the two dimensional electron gas in the device channel into the tail states near the conduction band of the GaN layer. The model predicts a fairly weak temperature dependence of the 1/f noise in the temperature interval from 50 K to 600 K with the value of the Hooge parameter alpha within the range of 10(-3) - 10(-5). Both these predictions are in agreement with experimental data.
引用
收藏
页码：291 / 294
页数：4
相关论文
共 50 条
  • [1] Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors
    Rumyantsev, SL
    Pala, N
    Shur, MS
    Gaska, R
    Levinshtein, ME
    Ivanov, PA
    Khan, MA
    Simin, G
    Hu, X
    Yang, J
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (05) : 476 - 479
  • [2] Tunneling mechanism of the 1/f noise in GaN/AlGaN heterojunction field-effect transistors -: art. no. 123706
    Dmitriev, AP
    Levinshtein, ME
    Rumyantsev, SL
    Shur, MS
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (12)
  • [3] High field transport in GaN and AlGaN/GaN heterojunction field effect transistors
    Yamakawa, S.
    Branlard, J.
    Saraniti, M.
    Goodnick, S. M.
    NONEQUILIBRIUM CARRIER DYNAMICS IN SEMICONDUCTORS PROCEEDINGS, 2006, 110 : 133 - +
  • [4] High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors
    Dyakonova, N
    Rumyantsev, SL
    Shur, MS
    Meziani, Y
    Pascal, F
    Hoffmann, A
    Fareed, Q
    Hu, X
    Bilenko, Y
    Gaska, R
    Knap, W
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (04): : 677 - 679
  • [5] AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
    Levinshtein, ME
    Rumyantsev, SL
    Gaska, R
    Yang, JW
    Shur, MS
    APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1089 - 1091
  • [6] Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
    Shimizu, Mitsuaki
    Inada, Masaki
    Yagi, Shuichi
    Nakajima, Akira
    Okumura, Hajime
    Ubukata, Akinori
    Yano, Yoshiki
    Akutsu, Nakao
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1329 - +
  • [7] Effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors
    Jogai, B. (brahmanand.jogai@wpafb.af.mil), 1600, American Institute of Physics Inc. (94):
  • [8] Effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors
    Jogai, B
    Albrecht, JD
    Pan, E
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) : 3984 - 3989
  • [9] Low-frequency noise in AlGaN/GaN heterojunction field effect transistors on SiC and sapphire substrates
    Rumyantsev, S
    Levinshtein, ME
    Gaska, R
    Shur, MS
    Yang, JW
    Khan, MA
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) : 1849 - 1854
  • [10] 1/f noise and "ballistic mobility" in GaN/AlGaN heterostructure field effect transistors in high magnetic fields
    Rumyantsev, S
    Shur, MS
    Knap, W
    Dyakonova, N
    Pascal, F
    Hoffman, A
    Ghuel, Y
    Gaquiere, C
    Theron, D
    NOISE IN DEVICES AND CIRCUITS II, 2004, 5470 : 277 - 285
12345