Cathodoluminescence Spectroscopy in Graded InxGa1-xN

被引：0

作者：

Zhao, Xiaofang ^{[1
]}

Wang, Tao ^{[2
]}

Sheng, Bowen ^{[3
]}

Zheng, Xiantong ^{[3
]}

Chen, Li ^{[2
]}

Liu, Haihui ^{[1
]}

He, Chao ^{[4
]}

Xu, Jun ^{[2
]}

Zhu, Rui ^{[2
]}

Wang, Xinqiang ^{[3
]}

机构：

[1] Tiangong Univ, Sch Mat Sci & Engn, Tianjin 300387, Peoples R China

[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[3] Peking Univ, State Key Lab Mesoscop Phys & Frontiers Sci, Sch Phys, Ctr Nanooptoelect, Beijing 100871, Peoples R China

[4] Beijing Goldenscope Technol Co Ltd, Beijing 100190, Peoples R China

来源：

NANOMATERIALS | 2022年 / 12卷 / 21期

基金：

中国国家自然科学基金;

关键词：

full-composition-graded InxGa1-xN films; cathodoluminescence; nitride semiconductor; paired defects; SOLAR-CELLS; INGAN; DISLOCATIONS;

D O I：

10.3390/nano12213719

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

InGaN materials are widely used in optoelectronic devices due to their excellent optical properties. Since the emission wavelength of the full-composition-graded InxGa1-xN films perfectly matches the solar spectrum, providing a full-spectrum response, this makes them suitable for the manufacturing of high-efficiency optoelectronic devices. It is extremely important to study the optical properties of materials, but there are very few studies of the luminescence of full-composition-graded InxGa1-xN ternary alloy. In this work, the optical properties of full-composition-graded InxGa1-xN films are studied by cathodoluminescence (CL). The CL spectra with multiple luminescence peaks in the range of 365-1000 nm were acquired in the cross-sectional and plan-view directions. The CL spectroscopy studies were carried out inside and outside of microplates formed under the indium droplets on the InGaN surface, which found that the intensity of the light emission peaks inside and outside of microplates differed significantly. Additionally, the paired defects structure is studied by using the spectroscopic method. A detailed CL spectroscopy study paves the way for the growth and device optimization of high-quality, full-composition-graded InxGa1-xN ternary alloy materials.

引用

页数：9

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