Quantum-confined and pseudo Stark effects in the semiconductor conical quantum dot

被引:0
|
作者
Dvoyan, K. G. [1 ]
Tshantshapanyan, A. A. [1 ]
Vlahovic, B. [1 ]
Salamo, G. J. [2 ]
机构
[1] North Carolina Cent Univ, Dept Math & Phys, 1801 Fayetteville St, Durham, NC 27707 USA
[2] Univ Arkansas, Inst Nanoscale Mat Sci & Engn, Fayetteville, AR 72701 USA
来源
NANOPHOTONIC MATERIALS XIV | 2017年 / 10344卷
基金
美国国家科学基金会;
关键词
conical quantum dot; quantum-confined Stark effect; pseudo-Stark effect; adiabatic approximation; variational method; perturbation theory; OBLATE; STATES;
D O I
10.1117/12.2274688
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electronic states in a GaAs conical quantum dot (QD) are theoretically investigated within the framework of the geometric adiabatic approximation both in the strong and weak quantum confinement regimes. For the lower levels of the spectrum, the localization of the electron in the vicinity of the QD center-of-gravity is proved. The QD conical symmetry leads to the appearance of an atypical linear term in the effective confining potential. The influence of a uniform electric field on the system is also considered, and both the quantum-confined and pseudo- Stark effects are discussed. The possibility of the quasi-continuous spectrum implementation in the system is revealed in the presence of an electric field. For the weak quantum confinement regime, the motion of the exciton's center-of-gravity is quantized, which leads to the appearance of additional Coulomb sub-levels.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] QUANTUM-CONFINED STARK EFFECTS IN SEMICONDUCTOR QUANTUM DOTS
    WEN, GW
    LIN, JY
    JIANG, HX
    CHEN, Z
    PHYSICAL REVIEW B, 1995, 52 (08): : 5913 - 5922
  • [2] Quantum-confined stark effects in semiconductor quantum disks
    Susa, N
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (10) : 1760 - 1766
  • [3] Quantum-confined Stark effects in a single GaN quantum dot
    Liu Yong-Hui
    Wang Xue-Feng
    Li Shu-Shen
    CHINESE PHYSICS LETTERS, 2008, 25 (07) : 2628 - 2630
  • [4] Quantum-confined stark effects in a single GaN quantum dot
    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    Chin. Phys. Lett., 2008, 7 (2628-2630):
  • [5] Quantum-confined Stark effects in interdiffused semiconductor quantum dots
    Wang, Yang
    Negro, David
    Djie, Hery S.
    Ooi, Boon S.
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XV, 2007, 6468
  • [6] THz quantum-confined Stark effect in semiconductor quantum dots
    Turchinovich, Dmitry
    Monozon, Boris S.
    Livshits, Daniil A.
    Rafailov, Edik U.
    Hoffmann, Matthias C.
    ULTRAFAST PHENOMENA AND NANOPHOTONICS XVI, 2012, 8260
  • [7] Quantum-confined Stark effects of InAs/GaAs self-assembled quantum dot
    Li, SS
    Xia, JB
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) : 7171 - 7174
  • [8] Simulation of the quantum-confined stark effect in a single InGaN quantum dot
    Lee, KH
    Robinson, JW
    Rice, JH
    Na, JH
    Taylor, RA
    Oliver, RA
    Kappers, MJ
    Humphreys, CJ
    NUSOD '05: PROCEEDINGS OF THE 5TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATIONS OF OPTOELECTRONIC DEVICES, 2004, : 5 - 6
  • [9] Anisotropy of the quantum-confined Stark effect in a single InAs quantum dot
    Ohmori, M
    Torii, K
    Sakaki, H
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3, 2006, 3 (03): : 512 - +
  • [10] Quantum-confined Stark shift in electroreflectance of a cylindrical GaN quantum dot
    Gao, Haiyan
    Xiong, Guiguang
    Feng, Xiaobo
    MICROELECTRONICS JOURNAL, 2006, 37 (08) : 742 - 745