Sintering effect on electrical properties of ZnO-V2O5-MnO2-Nb2O5 ceramics

被引:17
|
作者
Nahm, Choon-W. [1 ]
机构
[1] Dong Eui Univ, Dept Elect Engn, Semicond Ceram Lab, Pusan 614714, South Korea
关键词
Ceramics; Sintering; Electrical properties; Varistors; NONOHMIC PROPERTIES; MICROSTRUCTURE; VARISTORS;
D O I
10.1016/j.jallcom.2011.06.065
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The microstructure and electrical properties of quaternary ZnO-V2O5-MnO2-Nb2O5 ceramics were investigated at different sintering temperature (875-950 degrees C). The average grain size increased from 4.4 mu m to 9.6 mu m with increasing sintering temperature. The breakdown field decreased from 6991 V/cm to 943 V/cm with increasing sintering temperature. Proper sintering for quaternary ZnO-V2O5-MnO2-Nb2O5 ceramics led to surprisingly high nonlinear coefficient (50). The donor concentration increased from 3.33 x 10(17) cm(-3) to 7.64 x 10(17) cm(-3) with increasing sintering temperature and the barrier height exhibited the maximum value (1.07 eV) at 900 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
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页码:L314 / L317
页数:4
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