A full adder design using serially connected single-layer magnetic tunnel junction elements

被引:11
|
作者
Lee, Seungyeon [1 ]
Seo, Sunae [2 ]
Lee, Seungjun [1 ]
Shin, Hyungsoon [1 ]
机构
[1] Ewha Womans Univ, Dept Informat Elect Engn, Seoul 120750, South Korea
[2] Samsung Adv Inst Technol, Semicond Device Lab, Gyeonggi Do 44971, South Korea
关键词
magnetic tunnel junction; magnetoresistive devices; nonvolatile logic device;
D O I
10.1109/TED.2007.914470
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Magnetic tunnel junction (MTJ) elements based magnetologic promises many advantages over conventional CMOS logic devices. MTJ elements can be configured by simple circuitry to compute various Boolean functions and store the results. Advantages of magnetologic include low power consumption, the possibility of high-speed operation, and high density. We have proposed a novel magnetologic structure comprising a single-layer MTJ and a current driver, which requires fewer processing steps and provides enhanced functional flexibility and uniformity. Here, we expand the computational capabilities of single-layer MTJs, using series connections. An algorithm that realizes complex Boolean functions with fewer magnetologic elements than previous papers is presented.
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页码:890 / 895
页数:6
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