Efficiency improvement in exponential waveguide silicon Raman lasers

被引：0
|
作者：
Khorasaninejad, M. [1 ]
Kaatuzian, H. [1 ]
Hakimi, A. [2 ]
机构：
[1] Amirkabir Univ Technol, Dept Elect Engn, Tehran, Iran
[2] Shahid Bahanar Univ, Dept Elect Engn, Kerman, Iran
来源：
EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/EDSSC.2007.4450210
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We analyze continuous wave Raman lasing in silicon-on-insulator (SOI) rib waveguides. Then, we propose an exponential structure for SOI waveguides, which leads to higher lasing efficiency than rib waveguides.
引用
收藏
页码：657 / +
页数：2
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