Organic Thin-Film Memcapacitive Device With Analog and Nonvolatile Memory Effect

被引:9
|
作者
Li, Li-Xing [1 ]
Cai, Jia-Wei [1 ]
Zhong, Ya-Nan [1 ]
Gao, Xu [1 ]
Xu, Jian-Long [1 ]
Wang, Sui-Dong [1 ,2 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
[2] Macau Univ Sci & Technol, Macao Inst Mat Sci & Engn MIMSE, MUST SUDA Joint Res Ctr Adv Funct Mat, Taipa, Macao, Peoples R China
基金
中国国家自然科学基金;
关键词
Pentacene; Capacitance; Electrets; Polymers; Capacitance measurement; Nonvolatile memory; Electrodes; Memcapacitive device; organic thin film; pentacene; polymer electret;
D O I
10.1109/LED.2022.3195237
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An organic thin-film memcapacitive device, based on a partially covered organic semiconducting layer and a polymer electret charge trapping layer, is achieved. The device has a large number of capacitive states, with the effects of analog modulation upon writing and nonvolatile memory upon reading. A comprehensive physical model related to the tuning of the carrier accumulation threshold in the device is established to elaborate its memcapacitive characteristics. The memcapacitive device could be a good candidate as an organic thin-film electronic synapse with ultralow static power.
引用
收藏
页码:1539 / 1542
页数:4
相关论文
共 50 条
  • [41] Evaluation of Thin-Film Biostimulating Device using Thin-Film Transistors
    Miyake, Kohei
    Tomioka, Keisuke
    Kimura, Mutsumi
    2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2017, : 40 - 41
  • [42] Fabrication and memory characteristics of a new organic thin film device
    Guo, Peng
    Ji, Xin
    Dong, Yuanwei
    Lu, Yinxiang
    Xu, Wei
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2008, 29 (01): : 140 - 143
  • [43] POLARIZED MEMORY EFFECT IN SE THIN-FILM DIODES
    MATSUSHITA, T
    YAMAMOTO, K
    YAMAGAMI, T
    OKUDA, M
    SOLID STATE COMMUNICATIONS, 1972, 11 (10) : 1413 - +
  • [44] NDRO THIN-FILM MEMORY DEVICE EXHIBITING TRIANGULAR HYSTERESIS LOOP
    BELSON, HS
    DESAVAGE, BF
    TEBBLE, RS
    PARKER, MR
    IEEE TRANSACTIONS ON MAGNETICS, 1970, MAG6 (03) : 722 - &
  • [45] PHOTOCONDUCTOR AND ELECTRODE REQUIREMENTS FOR THIN-FILM FERROELECTRIC/PHOTOCONDUCTOR MEMORY DEVICE
    SHARMA, BS
    MEHTA, RR
    FERROELECTRICS, 1972, 3 (2-3-) : 225 - &
  • [46] PHOTOCONDUCTOR AND ELECTRODE REQUIREMENTS FOR THIN-FILM FERROELECTRIC/PHOTOCONDUCTOR MEMORY DEVICE
    SHARMA, BS
    MEHTA, RR
    IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1972, SU19 (02): : 225 - &
  • [47] Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device
    Zheng, Yichu
    Fischer, Axel
    Sawatzki, Michael
    Doan, Duy Hai
    Liero, Matthias
    Glitzky, Annegret
    Reineke, Sebastian
    Mannsfeld, Stefan C. B.
    ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (04)
  • [48] Highly sensitive thin-film organic phototransistors: Effect of wavelength of light source on device performance
    Noh, YY
    Kim, DY
    Yase, K
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
  • [49] Oxide-Channel Ferroelectric-Gate Thin-Film Transistors with Nonvolatile Memory Function
    Tokumitsu, Eisuke
    FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2ND EDITION, 2020, 131 : 111 - 124
  • [50] P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory
    Chen, Xin
    Liu, Lu
    Liu, Shi-Zheng
    Cui, Yu-Shuang
    Chen, Xiang-Zhong
    Ge, Hai-Xiong
    Shen, Qun-Dong
    APPLIED PHYSICS LETTERS, 2013, 102 (06)