Direct Observation of Heat Transport in Plural AlN Films Using Thermal Imaging and Transient Thermal Reflectance Method

被引：3

作者：

Lee, Taehun ^{[1
]}

Burzo, Mihai G. ^{[2
]}

Komarov, Pavel L. ^{[2
]}

Raad, Peter E. ^{[2
]}

Kim, M. J. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] So Methodist Univ, Dept Mech Engn, Dallas, TX 75275 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 05期

关键词：

THIN-FILMS; CONDUCTIVITY MEASUREMENTS;

D O I：

10.1149/1.3543896

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Transient thermal reflectance and thermal imaging were used to examine heat transport through AlN thin films deposited on Si substrates. The effective thermal conductivity of thin-film AlN was found to be in the range of 2-7 W/mK, depending on the microstructure of the film. Experimental thermal imaging comparisons also indicate a 32% higher heat dissipation efficiency for AlN films compared with SiO2 films of similar thickness. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3543896] All rights reserved.

引用

页码：H184 / H186

页数：3

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