Molecular Dynamics Simulation on Grinding Process of Cu-Si and Cu-SiO2 Composite Structures

被引：0
|
作者：
Xu, Yixin [1 ]
Zhu, Fulong [1 ]
Wang, Miaocao [1 ]
Liu, Xiaojian [1 ]
Liu, Sheng [1 ,2 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Inst Microsyst, Wuhan 430074, Hubei, Peoples R China
[2] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Hubei, Peoples R China
来源：
2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2018年
基金：
中国国家自然科学基金;
关键词：
molecular dynamic; wafer thinning; composite structure; grinding; MONOCRYSTALLINE SILICON; SURFACE; WEAR;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The molecular dynamics (MD) simulation was performed for Cu-Si and Cu-SiO(2 )nano-metric grinding models. The grinding depth and speed were considered to investigate influence of them in grinding. The transformation of the atomic crystal structure of the workpiece during the grinding process was investigated to reveal the material removal mechanism in nano-grinding. The variation of grinding force between the two models was analyzed. The results showed that grinding force was mainly composed of tangential force and normal force. Under the same grinding parameters, the grinding force of the two models changed similarly.
引用
收藏
页码：79 / 83
页数：5
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