Characterization of co-sputtered MgxZn1-xO thin films and their application in CdTe solar cells

被引:12
|
作者
Wang, Ailing [1 ]
Tang, Tianyu [1 ]
Ren, Shengqiang [1 ]
Zhang, Jingquan [1 ]
Wu, Lili [1 ]
Li, Wei [1 ]
Wang, Wenwu [1 ]
Feng, Lianghuan [1 ]
机构
[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Sichuan, Peoples R China
基金
国家高技术研究发展计划(863计划);
关键词
MgxZn1-xO thin film; Co-sputtering; CdTe solar cells; CONDUCTION-BAND OFFSET; OPTICAL-PROPERTIES; MG CONTENT; BUFFER; PASSIVATION; EFFICIENCY; GROWTH; GAP;
D O I
10.1016/j.mssp.2019.01.031
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper,MgxZn1-xO (MZO) films with x from 0 to 0.25 were prepared by radio frequency (RF) magnetron co-sputtering, and the structure, surface morphology, optical and electronic properties of MZO films were investigated. With the increase of Mg content, the crystallinity of MZO films became worse with the appearance of grain agglomeration, and the optical energy band gap (E-g) linearly changed from 3.228 eV to 3.824 eV. The MZO films with different Mg content were used as the window layer for CdTe solar cells with or without CdS layer. The efficiency of MZO/CdTe devices is much lower than MZO/CdS/CdTe devices. Incorporating a buffer layer CdS into CdTe solar cells can significantly improve the devices efficiency, and the devices still maintain a high spectral response in the short wavelength region.
引用
收藏
页码:28 / 34
页数:7
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