Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN/GaN

被引：34
|
作者：
Okamoto, K [1 ]
Scherer, A
Kawakami, Y
机构：
[1] CALTECH, Dept Phys, Pasadena, CA 91125 USA
[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 16期
关键词：
D O I：
10.1063/1.2105999
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaN/GaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance. (C) 2005 American Institute of Physics.
引用
收藏
页码：1 / 3
页数：3
相关论文
共 50 条
  • [1] Imaging of silicon carrier dynamics with near-field scanning optical microscopy
    LaRosa, AH
    Yakobson, BI
    Hallen, HD
    DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 189 - 194
  • [2] Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
    Vertikov, A
    Kuball, M
    Nurmikko, AV
    Chen, Y
    Wang, SY
    APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2645 - 2647
  • [3] Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy
    Jeong, MS
    Kim, JY
    Kim, YW
    White, JO
    Suh, EK
    Hong, CH
    Lee, HJ
    APPLIED PHYSICS LETTERS, 2001, 79 (07) : 976 - 978
  • [4] Near-field scanning photoluminescence microscopy of InGaN/GaN quantum structures
    Tripathy, S
    Chua, SJ
    OPTICAL MICRO- AND NANOMETROLOGY IN MANUFACTURING TECHNOLOGY, 2004, 5458 : 155 - 162
  • [5] Near-field scanning optical spectroscopy of an InGaN quantum well
    Crowell, PA
    Young, DK
    Keller, S
    Hu, EL
    Awschalom, DD
    APPLIED PHYSICS LETTERS, 1998, 72 (08) : 927 - 929
  • [6] Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
    Kaneta, Akio
    Hashimoto, Tsuneaki
    Nishimura, Katsuhito
    Funato, Mitsuru
    Kawakami, Yoichi
    APPLIED PHYSICS EXPRESS, 2010, 3 (10)
  • [7] Real-time near-field evidence of optical blinking in the photoluminescence of InGaN by scanning near-field optical microscope
    Oikawa, Kotaro
    Feldmeier, Christian
    Schwarz, Ulrich Theodor
    Kawakami, Yoichi
    Micheletto, Ruggero
    OPTICAL MATERIALS EXPRESS, 2011, 1 (02): : 158 - 163
  • [8] A near-field scanning optical microscopy study of the photoluminescence from GaN films
    Liu, JT
    Perkins, NR
    Horton, MN
    Redwing, JM
    Tischler, MA
    Kuech, TF
    APPLIED PHYSICS LETTERS, 1996, 69 (23) : 3519 - 3521
  • [9] Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis
    Kim, MinKwan
    Choi, Sunghan
    Lee, Joo-Hyung
    Park, ChungHyun
    Chung, Tae-Hoon
    Baek, Jong Hyeob
    Cho, Yong-Hoon
    SCIENTIFIC REPORTS, 2017, 7
  • [10] Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis
    MinKwan Kim
    Sunghan Choi
    Joo-Hyung Lee
    ChungHyun Park
    Tae-Hoon Chung
    Jong Hyeob Baek
    Yong-Hoon Cho
    Scientific Reports, 7
12345