Near-field optical study of InGaN/GaN epitaxial layers and quantum wells

被引：51
|
作者：
Vertikov, A [1 ]
Kuball, M
Nurmikko, AV
Chen, Y
Wang, SY
机构：
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
[2] Brown Univ, Dept Phys, Providence, RI 02912 USA
[3] Hewlett Packard Labs, Palo Alto, CA 94304 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 21期
关键词：
D O I：
10.1063/1.121085
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have employed near-field scanning optical microscopy to investigate the influence of specific microstructural defects on the optical properties of thin InGaN/GaN epilayers and quantum wells. These defects are empty "pinholes" with a hexahedron cone morphology that are nucleated by threading dislocations from the GaN buffer layer. By correlating atomic force microscopy With spatially and spectrally resolved photoluminescence (PL) on a 100 nm spatial scale, we find that the pinholes have no clearly observable effect on the PL efficiency, at least partly due to the strong carrier localization in the InGaN nonrandom alloy. (C) 1998 American Institute of Physics.
引用
收藏
页码：2645 / 2647
页数：3
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