Shallow acceptors in Si/SiGe quantum well heterostructures

被引：0
|
作者：
Aleshkin, VY [1 ]
Gavrilenko, VI [1 ]
Kozlov, DV [1 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
10TH INTERNATIONAL CONFERENCE ON SHALLOW LEVEL CENTERS IN SEMICONDUCTORS (SLCS-10), PROCEEDINGS | 2003年
关键词：
D O I：
10.1002/pssc.200306183
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new theoretical method for calculation of acceptor spectra in heterostructures Si/SiGe, taking into account the anisotropy effects was developed.
引用
收藏
页码：687 / 689
页数：3
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