Spin Transport in Ferromagnet-InSb Nanowire Quantum Devices

被引:27
|
作者
Yang, Zedong [1 ]
Heischmidt, Brett [1 ]
Gazibegovic, Sasa [2 ]
Badawy, Ghada [2 ]
Car, Diana [2 ]
Crowell, Paul A. [1 ]
Bakkers, Erik P. A. M. [2 ]
Pribiag, Vlad S. [1 ]
机构
[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
[2] Eindhoven Univ Technol, NL-5600 Eindhoven, North Brabant, Netherlands
基金
美国国家科学基金会; 欧洲研究理事会;
关键词
InSb nanowire; semiconductor-ferromagnet quantum device; 1D ballistic spin transport; helical gap; ELECTRIC-FIELD CONTROL; MAJORANA FERMIONS; SUPERCONDUCTOR; CONDUCTANCE; MAGNETORESISTANCE; SEMICONDUCTORS; INTERFERENCE; POLARIZATION; SIGNATURES; EPITAXY;
D O I
10.1021/acs.nanolett.9b05331
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Signatures of Majorana zero modes (MZMs) have been observed in semiconductor nanowires (NWs) with a strong spin- orbital interaction (SOI) with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this platform requires eliminating spin degeneracy by applying a magnetic field. However, the field can adversely impact the induced superconductivity and places geometric restrictions on the device. These challenges could be circumvented by integrating magnetic elements with the NWs. Here, we report the first experimental investigation of spin transport across InSb NWs with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and reveals a regime where the device acts as a spin filter. These results open an avenue toward developing MZM devices with spin degeneracy lifted locally without external fields. They could also enable spin-based devices that leverage spin-orbital states in quantum wires.
引用
收藏
页码:3232 / 3239
页数:8
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