High mechanical stable flexible transparent conductive In-doped CdO thin film deposited at low temperature on PET substrate

被引:5
|
作者
Zhu, Zishu [1 ,2 ]
Zhu, Wei [1 ,2 ]
Chen, Yanpu [1 ,2 ]
Ma, Pingping [1 ,2 ]
Zhou, Haolei [1 ,2 ]
Lou, Liren [1 ,2 ]
Wang, Guanzhong [1 ,2 ]
机构
[1] Chinese Acad Sci, Key Lab Strongly Coupled Matter Phys, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
OPTICAL-PROPERTIES; ANTIREFLECTION; COATINGS; LAYER;
D O I
10.1007/s10854-022-07745-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To explore new kind of flexible transparent conductive oxide films for application in flexible optoelectronic devices, In-doped CdO thin films were synthesized by radio frequency magnetron sputtering on thin polyethylene terephthalate substrates at low temperature. The effects of growth time and temperature on the resistance and transmittance of In-doped CdO films were studied in detail for the first time. It is demonstrated that the sheet resistance of the film deposited at 100 degrees C for 20 min was 96.9 omega/cm(2) for the as-grown sample and increased about 6.4% after experienced 500 bending cycles. The results demonstrate that the In-doped CdO films possess not only excellent opto-electronic properties but also high mechanical stability. In-doped CdO films show great potential to be applied in wearable electronics, transparent devices, solar cells and so forth.
引用
收藏
页码:5575 / 5586
页数:12
相关论文
共 50 条
  • [1] High mechanical stable flexible transparent conductive In-doped CdO thin film deposited at low temperature on PET substrate
    Zishu Zhu
    Wei Zhu
    Yanpu Chen
    Pingping Ma
    Haolei Zhou
    Guanzhong LirenLou
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 5575 - 5586
  • [2] High Performance Bottom-Gate-Type Amorphous InGaZnO Flexible Transparent Thin-Film Transistors Deposited on PET Substrates at Low Temperature
    Lee, Hsin-Ying
    Ye, Wan-Yi
    Lin, Yung-Hao
    Lou, Li-Ren
    Lee, Ching-Ting
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (03) : 780 - 785
  • [3] High Performance Bottom-Gate-Type Amorphous InGaZnO Flexible Transparent Thin-Film Transistors Deposited on PET Substrates at Low Temperature
    Hsin-Ying Lee
    Wan-Yi Ye
    Yung-Hao Lin
    Li-Ren Lou
    Ching-Ting Lee
    Journal of Electronic Materials, 2014, 43 : 780 - 785
  • [4] Low temperature rf-sputtered In and Al co-doped ZnO thin films deposited on flexible PET substrate
    Park, Sang-Uk
    Koh, Jung-Hyuk
    CERAMICS INTERNATIONAL, 2014, 40 (07) : 10021 - 10025
  • [5] Muscovite mica as a flexible substrate for transparent conductive AZO thin films deposited by spray pyrolysis
    Nasiri, M.
    Rozati, S. M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 81 : 38 - 43
  • [6] Low-temperature deposited Titanium-doped zinc oxide thin films on the flexible PET substrate by DC magnetron sputtering
    Liu, Hanfa
    Lei, Chengxin
    VACUUM, 2011, 86 (04) : 483 - 486
  • [7] Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays
    Hanada, Toru
    Negishi, Tuyoto
    Shiroishi, Isao
    Shiro, Takashi
    THIN SOLID FILMS, 2010, 518 (11) : 3089 - 3092
  • [8] The fabrication of Cu nanowire/graphene/Al doped ZnO transparent conductive film on PET substrate with high flexibility and air stability
    Zhang, Liqiang
    Yang, Rui
    Chen, Kai
    Wang, Xin
    Tang, Yushu
    Yang, Fan
    Liu, Rui
    Ye, Zhizhen
    Li, Yongfeng
    MATERIALS LETTERS, 2017, 207 : 62 - 65
  • [9] High quality transparent conductive hydrogenated AZO with embedded Ag films deposited on PEN flexible substrate
    Genghua Yan
    Linquan Zhang
    Ruijiang Hong
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 13161 - 13166
  • [10] High quality transparent conductive hydrogenated AZO with embedded Ag films deposited on PEN flexible substrate
    Yan, Genghua
    Zhang, Linquan
    Hong, Ruijiang
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (15) : 13161 - 13166