Electric-Field-Driven Resistive Switching in the Dissipative Hubbard Model

被引:47
|
作者
Li, Jiajun [1 ]
Aron, Camille [2 ,3 ]
Kotliar, Gabriel [2 ]
Han, Jong E. [1 ]
机构
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] Rutgers State Univ, Dept Phys, Piscataway, NJ 08854 USA
[3] Princeton Univ, Dept Elect Engn, Princeton, NJ 08455 USA
基金
美国国家科学基金会;
关键词
GAP MOTT INSULATORS; TRANSITION; V2O3; VO2;
D O I
10.1103/PhysRevLett.114.226403
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study how strongly correlated electrons on a dissipative lattice evolve out of equilibrium under a constant electric field, focusing on the extent of the linear regime and hysteretic nonlinear effects at higher fields. We access the nonequilibrium steady states, nonperturbatively in both the field and the electronic interactions, by means of a nonequilibrium dynamical mean-field theory in the Coulomb gauge. The linear response regime, limited by Joule heating, breaks down at fields much smaller than the quasiparticle energy scale. For large electronic interactions, strong but experimentally accessible electric fields can induce a resistive switching by driving the strongly correlated metal into a Mott insulator. We predict a nonmonotonic upper switching field due to an interplay of particle renormalization and the field-driven temperature. Hysteretic I-V curves suggest that the nonequilibrium current is carried through a spatially inhomogeneous metal-insulator mixed state.
引用
收藏
页数:5
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