Growth and structure of photosensitive Pb1-xMnxTe(Ga) epitaxial films

The growth and structure of (1-1.5)-mu m-thick Pb1-xMnxTe(Ga) (x = 0.06) films with 0.4-0.9 at % of gallium, grown on BaF2 (111) and Pb1-xSnxTe (x = 0.2) (100) substrates by molecular beam epitaxy, have been investigated. It is established that the films are crystallized into an fcc stucture, and their growth planes are (111) and (100), according to the substrate oreintation. The optimal conditions for obtaining high-resistivity photosensitive p- and n-type films with a perfect crystal structure (W-1/2 = 80 ''-100 '') have been determined.