Strong n-type molecule as low bias negative differential resistance device predicted by first-principles study

被引：3
|
作者：
Min, Y. [1 ]
Zhong, C. G. [1 ]
Dong, Z. C. [1 ]
Zhao, Z. Y. [1 ]
Zhou, P. X. [1 ]
Yao, K. L. [2 ]
机构：
[1] Nantong Univ, Sch Sci, Nantong 226007, Jiangsu, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2016年 / 84卷
关键词：
Molecular electronics; Negative differential resistance; First-principles; Non-equilibrium Green's function; Density functional theory; SINGLE-MOLECULE; JUNCTIONS; DIODE; TRANSISTORS; HYSTERESIS; NANOTUBE;
D O I：
10.1016/j.physe.2016.05.026
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A first-principles study of the transport properties of two thiolated pentacenes sandwiching ethyl is performed. The thiolated pentacene molecule shows strong n-type characteristics when contact Ag lead because of low work function about metal Ag. A strong negative differential resistance (NDR) effect with large peak-to-valley ratio of 758% is present under low bias. Our investigations indicate that strong n- or p-type molecules can be used as low bias molecular NDR devices and that the molecular NDR effect based on molecular-level leaving not on molecular-level crossing has no hysteresis. (C) 2016 Published by Elsevier B.V.
引用
收藏
页码：263 / 267
页数：5
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