Negative differential resistance in n-type noncompensated silicon at low temperature

被引：8
|
作者：
Danilyuk, A. L. [1 ]
Trafimenko, A. G. [1 ]
Fedotov, A. K. [2 ]
Svito, I. A. [2 ]
Prischepa, S. L. [1 ]
机构：
[1] Belarusian State Univ Informat & Radioelect, P Browka 6, Minsk 220013, BELARUS
[2] Belarusian State Univ, Nezalezhnastsi Ave 4, Minsk 220030, BELARUS
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 22期
关键词：
MOLECULE;
D O I：
10.1063/1.4968825
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9-2.25K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due to the accumulation of the charge injected by current. Published by AIP Publishing.
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页数：4
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