Thermal stability of sheet resistance in AlGaN/GaN 2DEG structure

被引：0

作者：

Shiojima, K ^{[1
]}

Shigekawa, N ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An annealing study of an AlGaN/GaN two-dimensional electron gas structure was conducted in combination with precise AlGaN thickness measurements using reflectivity spectra. It is found that the sheet resistance increases when annealing is performed below the growth temperature, and the increase depends on the AlGaN thickness and crystal quality. One possible explanation for the increase is that Si donors in low-quality AlGaN layers are passivated or compensated from the top surfaces upon annealing.

引用

页码：397 / 400

页数：4

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