Anisotropy of spin splitting and spin relaxation in lateral quantum dots

被引:39
|
作者
Fal'ko, VI [1 ]
Altshuler, BL
Tsyplyatyev, O
机构
[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[2] Princeton Univ, Dept Phys, Princeton, NJ 08540 USA
[3] NEC Labs Amer Inc, Princeton, NJ 08540 USA
关键词
D O I
10.1103/PhysRevLett.95.076603
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Inelastic spin relaxation and spin splitting epsilon(s) in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, epsilon(s) demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B parallel to[100] than for B parallel to[110].
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页数:4
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