Tailoring of nitrogen-vacancy colour centers in diamond epilayers by in situ sulfur and nitrogen anion engineering

In this work, a sulfur and nitrogen co-doping technique has been demonstrated for diamond epilayer growth by microwave plasma chemical vapor deposition (MPCVD). Results show that the nitrogen concentration in films could be tailored by co-doping of sulfur. At a certain growth condition, single nitrogen-vacancy (NV) colour centers could be achieved. A competition mechanism between sulfur and nitrogen incorporation in the H-2/CH4 plasma is proposed to explain the efficient suppression of the incorporated nitrogen. Briefly, adding H2S decreases the growth rate and the resulting (S or S-2) species could react with the dissociated nitrogen atoms to form S and N-containing clusters. Hence, the concentration of the NV centers in diamond is decreased. Meanwhile, density functional theory (DFT) calculations indicate an increment of the NV formation energy in the presence of sulfur, which confirms that sulfur has a suppression effect on the formation of the NV centers. This study provides a new method to adjust the concentration of the NV centers in the diamond films.