Dielectric relaxation of Bi4Ti3O12 ceramics prepared by the low-temperature combustion synthesis

Bismuth layered structure ferroelectrics with high Curie temperature is of particular concern to the researchers worldwide nowadays however, device fabrication is of limited interest due to low polarization. In this contribution, Bi4Ti3O12 ceramics was prepared for the first time using a low-temperature combustion synthesis and the properties were recorded. Three shoulders of epsilon(T) and tan delta(T) were observed which gave evidence for three relaxation contribution. The permittivity peak at 530 degrees C is of particular interest, since its magnitude is even larger than the one associated with ferroelectric-paraelectric phase transition. Consequently, the relaxation type and its origin are identified using impedance analysis and Raman spectroscopy, respectively.