Intrinsic ferroelectricity and large bulk photovoltaic effect in novel two-dimensional buckled honeycomb-like lattice of NbP: first-principles study
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作者:
Tiwari, Rajender Prasad
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Jawaharlal Nehru Univ, Special Ctr Nano Sci, New Delhi 110067, India
Asia Pacific Ctr Theoret Phys, Pohang 37673, South KoreaJawaharlal Nehru Univ, Special Ctr Nano Sci, New Delhi 110067, India
Tiwari, Rajender Prasad
[1
,2
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Birajdar, Balaji
[1
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Ghosh, Ram Krishna
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Jawaharlal Nehru Univ, Special Ctr Nano Sci, New Delhi 110067, IndiaJawaharlal Nehru Univ, Special Ctr Nano Sci, New Delhi 110067, India
Ghosh, Ram Krishna
[1
]
机构:
[1] Jawaharlal Nehru Univ, Special Ctr Nano Sci, New Delhi 110067, India
[2] Asia Pacific Ctr Theoret Phys, Pohang 37673, South Korea
Using first-principles calculations, we predict that the two-dimensional (2D) monolayers of NbP with the buckled honeycomb-like and puckered tetragonal structure can be obtained from the (110) and (001) orientations, respectively, of its bulk crystal structure. The electronic properties of these monolayers are spectacularly different as tetragonal lattice is metallic whereas the honeycomb-like lattice (h-NbP) is a semiconductor and exhibits intrinsic ferroelectricity originating from a rare sd (2)-sp (2) hybridization. The shift current bulk photovoltaic effect (BPVE) is systematically investigated in the h-NbP monolayer (1.21 angstrom thickness) using the Wannier interpolation method. Strong absorption of visible light at similar to 2 eV and a large 3D shift current of similar to 180 mu A V-2 is obtained which is attributed to the partial delocalization of Bloch states due to sd (2)-sp (2) hybridization. We compare the shift current response of h-NbP monolayer with that of some previously reported bulk ferroelectrics and 2D monolayers, suggesting that h-NbP monolayer can yield a large shift current at an ultimate thickness and is a promising 2D material for the BPVE application under the visible light. Strain effect is also investigated, revealing that the h-NbP monolayer is dynamically stable up to a strain limit of +/- 3%, and the shift current increases by similar to 9% at a compressive strain of -3% as the Bloch states are more delocalized due to the strengthening of sd (2)-sp (2) hybridization. The results presented in this study can pave the paths to fabricate the 2D monolayered structures of NbP, and realize the BPVE based next-generation solar cells of h-NbP monolayer.
机构:
Northwest Univ, Sch Phys, Xian 710069, Peoples R China
Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, Singapore
Hunan Normal Univ, Sch Phys & Elect, Changsha 410081, Hunan, Peoples R ChinaNorthwest Univ, Sch Phys, Xian 710069, Peoples R China
Li, Si
Wang, Shan-Shan
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Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, Singapore
Southeast Univ, Sch Phys, Nanjing 211189, Peoples R ChinaNorthwest Univ, Sch Phys, Xian 710069, Peoples R China
Wang, Shan-Shan
Tai, Bo
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Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, SingaporeNorthwest Univ, Sch Phys, Xian 710069, Peoples R China
Tai, Bo
Wu, Weikang
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Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, SingaporeNorthwest Univ, Sch Phys, Xian 710069, Peoples R China
Wu, Weikang
Xiang, Bin
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Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R ChinaNorthwest Univ, Sch Phys, Xian 710069, Peoples R China
Xiang, Bin
Sheng, Xian-Lei
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Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
Beihang Univ, Key Lab Micronano Measurement Manipulat & Phys, Beijing 100191, Peoples R ChinaNorthwest Univ, Sch Phys, Xian 710069, Peoples R China
Sheng, Xian-Lei
Yang, Shengyuan A.
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Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, SingaporeNorthwest Univ, Sch Phys, Xian 710069, Peoples R China
机构:
Hanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South KoreaHanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
机构:
College of Physics, Jilin Normal University, Siping
Key Laboratory of Functional Materials Physics and Chemistry of Ministry of Education, Jilin Normal University, ChangchunCollege of Physics, Jilin Normal University, Siping
Liu X.
Liu Y.
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College of Physics, Jilin Normal University, SipingCollege of Physics, Jilin Normal University, Siping
Liu Y.
Zhao Z.
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College of Physics, Jilin Normal University, SipingCollege of Physics, Jilin Normal University, Siping
Zhao Z.
Wang D.
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机构:
College of Physics, Jilin Normal University, Siping
Key Laboratory of Functional Materials Physics and Chemistry of Ministry of Education, Jilin Normal University, ChangchunCollege of Physics, Jilin Normal University, Siping
Wang D.
Zhang Y.
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机构:
College of Physics, Jilin Normal University, Siping
Key Laboratory of Functional Materials Physics and Chemistry of Ministry of Education, Jilin Normal University, ChangchunCollege of Physics, Jilin Normal University, Siping
Zhang Y.
Feng M.
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机构:
College of Physics, Jilin Normal University, Siping
Key Laboratory of Functional Materials Physics and Chemistry of Ministry of Education, Jilin Normal University, ChangchunCollege of Physics, Jilin Normal University, Siping
机构:
Guizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R China
Guizhou Med Univ, Dept Med Informat, Guiyang 561113, Peoples R ChinaGuizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R China
Huang, Mengya
Lang, Qizhi
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Guizhou Med Univ, Dept Med Informat, Guiyang 561113, Peoples R ChinaGuizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R China
Lang, Qizhi
Wang, Yi
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Guizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R ChinaGuizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R China
Wang, Yi
Guo, Xiang
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Guizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R ChinaGuizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R China
Guo, Xiang
Ding, Zhao
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Guizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R ChinaGuizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R China
Ding, Zhao
Yan, Jiang
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Guizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R ChinaGuizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R China
Yan, Jiang
Liu, Xuefei
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机构:
Guizhou Normal Univ, Sch Phys & Elect Sci, Guiyang 550025, Peoples R China
Guizhou Normal Univ, Sch Integrated Circuit, Guiyang 550025, Peoples R ChinaGuizhou Univ, Coll Big Data & Informat Engn, Guizhou 550025, Peoples R China