Inner-shell 2p photoionization and Auger decay of atomic silicon

被引：15

作者：

Jankala, K. ^{[1
]}

Urpelainen, S. ^{[1
,2
]}

Huttula, M. ^{[1
]}

Fritzsche, S. ^{[1
,3
,4
]}

Heinasmaki, S. ^{[1
]}

Aksela, S. ^{[1
]}

Aksela, H. ^{[1
]}

机构：

[1] Univ Oulu, Dept Phys Sci, Oulu 90014, Finland

[2] Lund Univ, Max Lab, SE-22100 Lund, Sweden

[3] Max Planck Inst Kernphys, D-69029 Heidelberg, Germany

[4] GSI Darmstadt, D-64291 Darmstadt, Germany

来源：

PHYSICAL REVIEW A | 2008年 / 77卷 / 06期

关键词：

D O I：

10.1103/PhysRevA.77.062504

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A detailed experiment on 2p photoionization and subsequent Auger decay of atomic silicon is presented. Fine-structure-resolved photoelectron and Auger electron spectra are interpreted with the aid of large-scale multiconfiguration calculations. Energy separation and the relative cross sections of the 2p ionized fine-structure states of Si+ are given. The complete 2p Auger electron spectrum of Si is interpreted, and the intensity distribution to individual doubly ionized final states is studied.

引用

页数：9

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