Inner-shell 2p photoionization and Auger decay of atomic silicon

被引：15
|
作者：
Jankala, K. [1 ]
Urpelainen, S. [1 ,2 ]
Huttula, M. [1 ]
Fritzsche, S. [1 ,3 ,4 ]
Heinasmaki, S. [1 ]
Aksela, S. [1 ]
Aksela, H. [1 ]
机构：
[1] Univ Oulu, Dept Phys Sci, Oulu 90014, Finland
[2] Lund Univ, Max Lab, SE-22100 Lund, Sweden
[3] Max Planck Inst Kernphys, D-69029 Heidelberg, Germany
[4] GSI Darmstadt, D-64291 Darmstadt, Germany
来源：
PHYSICAL REVIEW A | 2008年 / 77卷 / 06期
关键词：
D O I：
10.1103/PhysRevA.77.062504
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A detailed experiment on 2p photoionization and subsequent Auger decay of atomic silicon is presented. Fine-structure-resolved photoelectron and Auger electron spectra are interpreted with the aid of large-scale multiconfiguration calculations. Energy separation and the relative cross sections of the 2p ionized fine-structure states of Si+ are given. The complete 2p Auger electron spectrum of Si is interpreted, and the intensity distribution to individual doubly ionized final states is studied.
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页数：9
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