Characterization of oxygen dimer-enriched silicon detectors

被引：3
|
作者：
Boisvert, V
Lindström, JL
Moll, M [1 ]
Murin, LI
Pintilie, I
机构：
[1] CERN, Div Phys, Geneva, Switzerland
[2] Univ Rochester, Dept Phys, Rochester, NY 14627 USA
[3] Lund Univ, Div Solid State Phys, Lund, Sweden
[4] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk, BELARUS
[5] Natl Inst Mat Phys, Bucharest, Romania
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 552卷 / 1-2期
关键词：
silicon detector; radiation hardness; oxygen dimer; electron irradiation; proton irradiation; FTIR;
D O I：
10.1016/j.nima.2005.06.005
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：49 / 55
页数：7
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