Voltage ramp and time-dependent dielectric breakdown in ultra-narrow Cu/SiO2 interconnects

被引：0
|
作者：
Park, H.
Lee, H. -B.
Jung, H. -K.
Choi, Z. -S.
Bae, J. -Y
Hong, J. -W.
Choi, K. I.
Park, B. L.
Lee, E. J.
Kim, J. -W
Lee, J. -M.
Choi, G. -H.
Moon, J. -T.
机构：
来源：
PROCEEDINGS OF THE IEEE 2008 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Voltage ramp dielectric breakdown (VRBD) and time-dependent dielectric breakdown (TDDB) characteristics of similar to 40nm-wide Cu/SiO2 interconnect dielectrics were investigated. The addition of a SiH4 treatment before capping SiN deposition led to more uniform breakdown fields, and better TDDB performance. The integration of a Ti-based barrier resulted in the best uniformity of breakdown fields, and a dramatic enhancement of TDDB reliability. The relationship between the VRBD and the TDDB characteristics was discussed, and the effect of SiH4 treatment was analyzed using TEM.
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页码：49 / 51
页数：3
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